KT911A

     Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 3 W

Maximum Collector-Base Voltage |Vcb|: 55 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 120 °C

Transition Frequency (ft): 1000 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 40