miercuri, 4 noiembrie 2020
2N3375
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 12 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 10
KT911A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 3 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 120 °C
Transition Frequency (ft): 1000 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 40
KT606A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2.5 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 120 °C
Transition Frequency (ft): 350 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 15
BLY61
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO39